Plasma Chemistry Dependent ECR Etching of GaN
نویسندگان
چکیده
منابع مشابه
ECR Based Chemically Assisted Plasma Etching Of GaAs
Etching of GaAs, when plasma of Ar gas is used and CF4 /O2 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ECR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/O2/Ar ratio and substrate bias on e...
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1 COBRA Inter-University Research Institute on Communication Technology Eindhoven University of Technology –Faculty of Electrical Engineering Telecommunications Technology and Electromagnetics – Opto-Electronic Devices Group P.O.Box 513, 5600 MB Eindhoven, The Netherlands E-mail: [email protected] 2 Department of Electronic Materials Engineering, Research School of Physical Sciences and En...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1995
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-395-751